CPU features

• operating voltage
  • fSYS =8MHz: 1.8V~5.5V
  • fSYS =12MHz: 2.7V~5.5V
  • fSYS =16MHz: 3.3V~5.5V
• up to 0.25μs instruction cycle with 16MHz system clock at VDD =5V
• power down and wake-up functions to reduce power consumption
• oscillator types
  • external high speed crystal – HXT
  • internal high speed 8/12/16MHz RC – HIRC
  • external low speed 32.768kHz Crystal – LXT
  • internal low speed 32kHz RC – LIRC
• multi-mode operation: FAST, SLOW, IDLE and SLEEP
• fully integrated internal 8MHz,12MHz and 16MHz oscillators require no external components
• all instructions executed in 1~3 instruction cycles
• table read instructions
• 115 powerful instructions
• 8-level subroutine nesting
• bit manipulation instruction

Peripheral features

• flash program memory: 8K×16
• RAM data memory: 512×8
• true EEPROM memory: 128×8
• watchdog timer function
• in application programming – IAP
• 21 bidirectional I/O lines
• two external interrupt lines shared with I/O pins
• programmable I/O port source current for LED applications
• multiple timer modules for time measure, compare match output, PWM output function or single pulse output function
• serial interfaces module – SIM for SPI or I²C communication
• fully-duplex universal asynchronous receiver and transmitter interface – UART
• 8 external channel 12-bit resolution A/D converter with programmable internal reference voltage VVR
• single comparator function
• dual time-base functions for generation of fixed time interrupt signals
• low voltage reset function
• low voltage detect function
• package type: 48-pin LQFP-EP

Individual cell voltage monitor features

• integrated voltage regulator with 5V/50mA and ±1% accuracy
• individual cell voltage monitor outputs 1/2 of battery cell voltage, when the analog output is 2.1V, it has an accuracy of ±7.5mV
• at Ta=-40°C~85°C, 2.5V reference voltage output with a maximum variation of 15mV in temperature drift
• internal cell charging balance switches
• two discharge N-type MOSFET gate drivers
• single charge N-type MOSFET gate driver
• charge/discharge differential OPA current monitor
  • IMON pin outputs amplified ISP-ISN differential voltage
  • voltage amplifying rate selection: 10/50
• discharge short-current detection
  • detection threshold voltage selection: 50mV/100mV/150mV/200mV/250mV/300mV/350mV/400mV
  • detection debounce time selection: 0μs~992μs, 32 sections, 32μs per section
• integrated over-temperature protection selection: 85°C/100°C/125°C/150°C
• sleep mode with 0.1μA ultra-low standby current
• two high-voltage wake-up functions