Features:

• Single 2.3V - 3.6V or 2.5V - 3.6V supply
• Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
• Continuous read capability through entire array
  • Up to 85MHz
  • Low-power read option up to 15MHz
  • Clock-to-output time (tV) of 6ns maximum
• User configurable page size
  • 512 bytes per page
  • 528 bytes per page (default)
  • Page size can be factory pre-configured for 512 bytes
• Two fully independent SRAM data buffers (512/528 bytes)
  • Allows receiving data while reprogramming the main memory array
• Flexible programming options
  • Byte/Page Program (1 to 512/528 bytes) directly into main memory
  • Buffer Write
  • Buffer to Main Memory Page Program
• Flexible erase options
  • Page Erase (512/528 bytes)
  • Block Erase (4KB)
  • Sector Erase (128KB)
  • Chip Erase (16-Mbits)
• Program and Erase Suspend/Resume
• Advanced hardware and software data protection features
  • Individual sector protection
  • Individual sector lockdown to make any sector permanently read-only
• 128-byte, One-Time Programmable (OTP) Security Register
  • 64 bytes factory programmed with a unique identifier
  • 64 bytes user programmable
• Hardware and software controlled reset options
• JEDEC Standard Manufacturer and Device ID Read
• Low-power dissipation
  • 400nA Ultra-Deep Power-Down current (typical)
  • 3uA Deep Power-Down current (typical)
  • 25uA Standby current (typical)
  • 7mA Active Read current (typical @ 15 MHz))
• Endurance: 100,000 program/erase cycles per page minimum
• Data retention: 20 years
• Complies with full industrial temperature range
• Green (Pb/Halide-free/RoHS compliant) packaging options
  • 8-lead SOIC (0.150" wide and 0.208" wide)
  • 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
  • 11-ball Wafer Level Chip Scale Package
  • Die in Wafer Form